Gbenga Agunbiade


Gbenga Agunbiade
  • Fall 2021-Spring 2026
  • Intel Corp.

Contact Info


Selected Publications

Publications as a group member:

First-author publications

1. G. Agunbiade, N. Rafizadeh, T. Zheng, and H. Zhao, Extended Photocarrier Lifetime in Graphene via 3R-Stacked Bilayer MoS2, Materials Today Nano, 10.1016/j.mtnano.2026.100907 (2026).

2. G. Agunbiade, T. Zheng, and H. Zhao, Stacking Polarity–Controlled Interlayer Photocarrier Dynamics in MoSe2/MoS2 Heterostructures, Nano Letters 26, 7564–7570 (2026).

3. G. Agunbiade, N. Rafizadeh, T. Zheng, and H. Zhao, Fast Superdiffusive Transport of Dipolar Excitons in 3R-Stacked MoS2 Bilayers, ACS Nano 19, 41244–41251 (2025).

4. G. Agunbiade, N. Rafizadeh, R. J. Scott, and H. Zhao, Transient absorption measurements of excitonic dynamics in 3R-MoS2, Physical Review B 109, 035410 (2024).

Other-author publications

5. N. Rafizadeh, G. Agunbiade, R. J. Scott, M. Vieux, and H. Zhao, Type-I and type-II interfaces in a MoSe2/WS2 van der Waals heterostructure, Applied Physics Letters 126, 042103 (2025).